Tuesday, October 11, 2016


16:30 – 19:00

Opening reception and poster session

Wednesday, October 12, 2016


9:00 – 9:15

Opening remarks

Laurent Pain, Raluca Tiron, Leti

9:15 – 9:50

Keynote Presentation:

From Lab to Fab: the DSA Journey

Chandra Sarma, Intel Corporation

Session 1: DSA integration



9:50 – 10:10


Impact of template shape on pattern placement and CDU for grapho-epitaxy DSA


Carolien Boeckx, imec


10:10 – 10:30


Defect reduction results for chemo-epitaxy DSA lines


Makoto Muramatsu, TEL


10:30 - 10:50


Comparative study of SIS of Ti and Al oxides on PS-b-PMMA block copolymers 


Marina Baryshnikova, imec


10:50 – 11:20





Session 2: Design



11:20 – 11:40


Impact of DSA process variability on circuit performance


Ioannis Karageorgos, imec


11:40 – 12:00


Reduction of error placement sensitivity to guiding patterns in cylinder forming Grapho-epitaxy processes, by model-based synthesis.


Joydeep Mitra, Mentor Graphics


12:00 – 12:20


Density-Balancing Mask Assignment for Via Patterning with Directed Self-Assembly



Maryann C. Tung, Stanford Univ.

Lunch/ Poster session /Invited presentation



12:20 – 13:20





13:20 – 14:40


Poster session



14:40 – 15:10


Invited paper:

Directed Self-Assembly of Block Copolymer Thin Films on Flexible and Transferrable Graphene Based Substrates



Sang Ouk Kim, KAIST

Session 3: High c BCP materials



15:10 – 15:30


Advances in DSA with high c silicon containing block copolymers


Grant Willson, Univ. of Texas at Austin


15:30 – 15:50


Topcoat-free Strategies for Orientation Control of All-organic High-χ Block Copolymers


Ankit Vora, IBM


15:50 – 16:10


Si-containing high-c block-copolymers for nanolithography applications


Marc Zelsmann, LTM


16:10 – 16:40





Session 4: Metrology



16:40 – 17:00


Metrology-based design of materials and processes for DSA


Paul Nealey, Univ. of Chicago


17:00 – 17:20


Defectivity monitoring for DSA contact hole application


Florian Delachat, Leti


17:20 – 17:40


Understanding defectivity in CHIPS flow hexagonal arrays and strategies for improvement


Arjun Singh, imec


17:40 – 18:00


Measuring the Interfacial Width of Block Copolymers


Daniel F. Sunday, NIST


19:00 – 22:30


Conference Dinner



Thursday, October 13, 2016



9:00 – 9:35


Keynote presentation:

Lithography Directing Self Assembly


Sander Wuister, ASML


Session 5: Processing



9:35 – 9:55


DSA Via Hole Shrink for Advanced Node Applications


Hitoshi Osaki, JSR


 9:55 – 10:15


The 300mm evaluation of a 38nm period lamellar PS-b-PMMA for L/S applications with graphoepitaxy.


Guillaume Claveau, Leti


10:15 – 10:35


Sequential infiltration synthesis of oxide nanostructures in block copolymer based templates using ozone as oxygen precursor


Michele Perego, IMM, CNR


10:35 – 10:55


Lithographic performances evaluation of directed self-assembly of block copolymers for shrink and doubling contacts


Shayma Bouanani, ST Microelectronics


10:55 – 11:20





Session 6: BCP Materials



11:20 – 11:40


Materials resists and formulations for improvement of DSA defectivity and features


Xavier Chevalier, Arkema


11:40 – 12:00


Influence of block copolymer composition in grapho-epitaxy directed self-assembly for contact hole multiplication


Jan Doise, imec


12:00 – 12:20


Directed Self-assembly of PS-b-PMMA with Ionic Liquid Addition



Xuanxuan Chen, Univ of Chicago

Lunch/ Invited Presentation



12:20 – 13:20





13:20 – 13:50


Invited presentation: Defect motion and annihilation in DSA of lamella-forming copolymers



Marcus Muller, Univ. of Gottingen

Session 7: Simulation



13:50 – 14:10


Modeling study of 3D morphologies for a line multiplication process


Andreas Erdmann, Fraunhofer IISB


14:10 – 14:30


Integer Programming for DSA grouping and Multiple Patterning Lithography



Dehia Ait-Ferhat, Mentor Graphics Corporation

Session 8: DSA Processing and Integration



14:30 – 14:50


Sub-10 nm Metal Wire Circuit Fabrication using Directed Self-Assembly of Block Copolymer


Tsukasa Azuma, EIDEC


14:50 – 15:20





15:20 – 15:40


Control of interface energies for implementing directed self-assembly of block copolymers in a 300 mm CMOS processing line


Marta Fernandez Regulez, IMB-CNM


15:40 – 16:00


DSA Process Window Extension and Stability Improvement via Controlled Atmospheric Conditions



Maxime Argoud, LETI

Discussion, Voting and adjourn



16:00 – 17:20


Debate and Voting




17:20 – 17:30


Closing Remarks


Laurent Pain, Raluca Tiron, Leti


17:30 – 18:30


Closing reception and Adjourn



Friday, October 14, 2016

COLISA – PLACYD joint workshop



a detailed agenda is availble here


Poster session





Formation of Alternative Lamellar Structure with sub-10nm Domain Spacing using Multiblock Copolymers



Atsushi Takano, Nagoya Univ.


Fabrication of horizontal well-ordered MoS2 nanowire arrays on substrate via self-assembly of BCP: Electrical studies


Colm Keating, CRANN, Trinity College Dublin


Laser Directed Self-Assembly of Block Copolymers


Hyeong Min Jin, KAIST


Atomistic Simulations of Oligomers used in Directed Self-Assembly Lithography: Estimation of the Interaction Parameter χ


Panagiotis-Nikolaos Tzounis, Univ. of Athenes


Single Unperturbed Chain Monte Carlo Algorithm: A General Methodology for Estimating the Dimensions of Polymer Chains


Panagiotis-Nikolaos Tzounis, Univ. of Athenes


Development of Perpendicularly Oriented Block Copolymer Lamellar Structures Without Surface Modification


Se Jin Ku, LG Chem Corporate R&D


Considerations in Compact Modeling for Phase Transition Prediction of Cylinder Forming Grapho-Epitaxial Processes


Polina Krasnova, Mentor Graphics


Mass production of block copolymers for next generation nanolithographic application


Yukio Kawaguchi, Horiba


DSA Process Window Expansion with Novel DSA Track Hardware


Yuji Tanaka, Screen


Influence of polymer properties on pattern characteristics of PS-b-PMMA films


Barbara Kosmala, Univ. College Cork


Hierarchical Directed Self-Assembly of PS-b-PMMA

for Modified Pattern Symmetries


Young Joo Choi, KAIST


Modeling Block Copolymer 3D Structures via Multiple Characterization Methods    


T. W. Collins, Univ. College Cork


Modelling approaches for block copolymer based contact hole shrink applications


Ulrich Welling, Univ. of Göttingen


Toward Diblock Copolymer Based Metrological Standards


Federico Ferrarese Lupi, INRM


Molecular Weight Dependence of Lateral ordering growth rate in asymmetric PS-b-PMMA thin films


Gabriele Seguini, IMM-CNR


Selective mat modification using wet treatment methods for TRAC flow


Varun Vaid, imec


Large Block Copolymer Self-Assembly for Fabrication of Subwavelength Structures for Antireflective Surfaces


Parvaneh Mokarian-Tabari, CRANN, Trinity College


Ultrarapid Plasma Treatment to favor Directed Self-Assembly in PS-b-PEO


E.Giraud, Univ. College Cork


3D modeling of the DSA planarization approach


Przemysław Michalak, Fraunhofer IISB


Simulation of defect formation in DSA process


B. Meliorisz, Synopsys GmbH





Process Parameter Induced Roughness for High χ BCPs


Mary Ann Hockey, Brewer


Templated DSA vias in sub-7 nm circuits: Design strategy and DSA-aware via decomposition


Ioannis Karageorgos, imec


Brush and BCPmaterial development for  DSA hole shrink process


Hitoshi Yamano, TOK


Advanced process control of new block copolymer systems to achieve high volume manufacturing specifications


S. Martinez, Pollen


GISAXS study of contact hole shrink process based on

graphoepitaxy of cylindrical morphology PS-b-PMMA block copolymers


G. Freychet, Leti


Substrate Compatible Neutral-layers for Successful DSA Applications


Victor Monreal, EMD


DSA Materials In-film Defectivity Advanced Investigation


Maxime Argoud, Leti


Etch transfer characteristics of sub−25 nm half pitch graphoepitaxial DSA contact holes

Nick Brakensiek, Brewer Science