Agenda

Tuesday, October 11, 2016

 

16:30 – 19:00

Opening reception and poster session

Wednesday, October 12, 2016

 

9:00 – 9:15

Opening remarks

Laurent Pain, Raluca Tiron, Leti

9:15 – 9:50

Keynote Presentation:

From Lab to Fab: the DSA Journey

Chandra Sarma, Intel Corporation

Session 1: DSA integration

 

 

9:50 – 10:10

 

Impact of template shape on pattern placement and CDU for grapho-epitaxy DSA

 

Carolien Boeckx, imec

 

10:10 – 10:30

 

Defect reduction results for chemo-epitaxy DSA lines

 

Makoto Muramatsu, TEL

 

10:30 - 10:50

 

Comparative study of SIS of Ti and Al oxides on PS-b-PMMA block copolymers 

 

Marina Baryshnikova, imec

 

10:50 – 11:20

 

Break

 

 

Session 2: Design

 

 

11:20 – 11:40

 

Impact of DSA process variability on circuit performance

 

Ioannis Karageorgos, imec

 

11:40 – 12:00

 

Reduction of error placement sensitivity to guiding patterns in cylinder forming Grapho-epitaxy processes, by model-based synthesis.

 

Joydeep Mitra, Mentor Graphics

 

12:00 – 12:20

 

Density-Balancing Mask Assignment for Via Patterning with Directed Self-Assembly

 

 

Maryann C. Tung, Stanford Univ.

Lunch/ Poster session /Invited presentation

 

 

12:20 – 13:20

 

Lunch

 

 

13:20 – 14:40

 

Poster session

 

 

14:40 – 15:10

 

Invited paper:

Directed Self-Assembly of Block Copolymer Thin Films on Flexible and Transferrable Graphene Based Substrates

 

 

Sang Ouk Kim, KAIST

Session 3: High c BCP materials

 

 

15:10 – 15:30

 

Advances in DSA with high c silicon containing block copolymers

 

Grant Willson, Univ. of Texas at Austin

 

15:30 – 15:50

 

Topcoat-free Strategies for Orientation Control of All-organic High-χ Block Copolymers

 

Ankit Vora, IBM

 

15:50 – 16:10

 

Si-containing high-c block-copolymers for nanolithography applications

 

Marc Zelsmann, LTM

 

16:10 – 16:40

 

Break

 

 

Session 4: Metrology

 

 

16:40 – 17:00

 

Metrology-based design of materials and processes for DSA

 

Paul Nealey, Univ. of Chicago

 

17:00 – 17:20

 

Defectivity monitoring for DSA contact hole application

 

Florian Delachat, Leti

 

17:20 – 17:40

 

Understanding defectivity in CHIPS flow hexagonal arrays and strategies for improvement

 

Arjun Singh, imec

 

17:40 – 18:00

 

Measuring the Interfacial Width of Block Copolymers

 

Daniel F. Sunday, NIST

 

19:00 – 22:30

 

Conference Dinner

 

 

Thursday, October 13, 2016

 

 

9:00 – 9:35

 

Keynote presentation:

Lithography Directing Self Assembly

 

Sander Wuister, ASML

 

Session 5: Processing

 

 

9:35 – 9:55

 

DSA Via Hole Shrink for Advanced Node Applications

 

Hitoshi Osaki, JSR

 

 9:55 – 10:15

 

The 300mm evaluation of a 38nm period lamellar PS-b-PMMA for L/S applications with graphoepitaxy.

 

Guillaume Claveau, Leti

 

10:15 – 10:35

 

Sequential infiltration synthesis of oxide nanostructures in block copolymer based templates using ozone as oxygen precursor

 

Michele Perego, IMM, CNR

 

10:35 – 10:55

 

Lithographic performances evaluation of directed self-assembly of block copolymers for shrink and doubling contacts

 

Shayma Bouanani, ST Microelectronics

 

10:55 – 11:20

 

Break

 

 

Session 6: BCP Materials

 

 

11:20 – 11:40

 

Materials resists and formulations for improvement of DSA defectivity and features

 

Xavier Chevalier, Arkema

 

11:40 – 12:00

 

Influence of block copolymer composition in grapho-epitaxy directed self-assembly for contact hole multiplication

 

Jan Doise, imec

 

12:00 – 12:20

 

Directed Self-assembly of PS-b-PMMA with Ionic Liquid Addition

 

 

Xuanxuan Chen, Univ of Chicago

Lunch/ Invited Presentation

 

 

12:20 – 13:20

 

Lunch

 

 

13:20 – 13:50

 

Invited presentation: Defect motion and annihilation in DSA of lamella-forming copolymers

 

 

Marcus Muller, Univ. of Gottingen

Session 7: Simulation

 

 

13:50 – 14:10

 

Modeling study of 3D morphologies for a line multiplication process

 

Andreas Erdmann, Fraunhofer IISB

 

14:10 – 14:30

 

Integer Programming for DSA grouping and Multiple Patterning Lithography

 

 

Dehia Ait-Ferhat, Mentor Graphics Corporation

Session 8: DSA Processing and Integration

 

 

14:30 – 14:50

 

Sub-10 nm Metal Wire Circuit Fabrication using Directed Self-Assembly of Block Copolymer

 

Tsukasa Azuma, EIDEC

 

14:50 – 15:20

 

Break

 

 

15:20 – 15:40

 

Control of interface energies for implementing directed self-assembly of block copolymers in a 300 mm CMOS processing line

 

Marta Fernandez Regulez, IMB-CNM

 

15:40 – 16:00

 

DSA Process Window Extension and Stability Improvement via Controlled Atmospheric Conditions

 

 

Maxime Argoud, LETI

Discussion, Voting and adjourn

 

 

16:00 – 17:20

 

Debate and Voting

 

all

 

17:20 – 17:30

 

Closing Remarks

 

Laurent Pain, Raluca Tiron, Leti

 

17:30 – 18:30

 

Closing reception and Adjourn

 

 

Friday, October 14, 2016

COLISA – PLACYD joint workshop

 

 

a detailed agenda is availble here


 

Poster session

 

 

P01

 

Formation of Alternative Lamellar Structure with sub-10nm Domain Spacing using Multiblock Copolymers

 

 

Atsushi Takano, Nagoya Univ.

P02

Fabrication of horizontal well-ordered MoS2 nanowire arrays on substrate via self-assembly of BCP: Electrical studies

 

Colm Keating, CRANN, Trinity College Dublin

P03

Laser Directed Self-Assembly of Block Copolymers

 

Hyeong Min Jin, KAIST

P04

Atomistic Simulations of Oligomers used in Directed Self-Assembly Lithography: Estimation of the Interaction Parameter χ

 

Panagiotis-Nikolaos Tzounis, Univ. of Athenes

P05

Single Unperturbed Chain Monte Carlo Algorithm: A General Methodology for Estimating the Dimensions of Polymer Chains

 

Panagiotis-Nikolaos Tzounis, Univ. of Athenes

P06

Development of Perpendicularly Oriented Block Copolymer Lamellar Structures Without Surface Modification

 

Se Jin Ku, LG Chem Corporate R&D

P07

Considerations in Compact Modeling for Phase Transition Prediction of Cylinder Forming Grapho-Epitaxial Processes

 

Polina Krasnova, Mentor Graphics

P08

Mass production of block copolymers for next generation nanolithographic application

 

Yukio Kawaguchi, Horiba

P09

DSA Process Window Expansion with Novel DSA Track Hardware

 

Yuji Tanaka, Screen

P10

Influence of polymer properties on pattern characteristics of PS-b-PMMA films

 

Barbara Kosmala, Univ. College Cork

P11

Hierarchical Directed Self-Assembly of PS-b-PMMA

for Modified Pattern Symmetries

 

Young Joo Choi, KAIST

P12

Modeling Block Copolymer 3D Structures via Multiple Characterization Methods    

 

T. W. Collins, Univ. College Cork

P13

Modelling approaches for block copolymer based contact hole shrink applications

 

Ulrich Welling, Univ. of Göttingen

P14

Toward Diblock Copolymer Based Metrological Standards

 

Federico Ferrarese Lupi, INRM

P15

Molecular Weight Dependence of Lateral ordering growth rate in asymmetric PS-b-PMMA thin films

 

Gabriele Seguini, IMM-CNR

P16

Selective mat modification using wet treatment methods for TRAC flow

 

Varun Vaid, imec

P17

Large Block Copolymer Self-Assembly for Fabrication of Subwavelength Structures for Antireflective Surfaces

 

Parvaneh Mokarian-Tabari, CRANN, Trinity College

P18

Ultrarapid Plasma Treatment to favor Directed Self-Assembly in PS-b-PEO

 

E.Giraud, Univ. College Cork

P19

3D modeling of the DSA planarization approach

 

Przemysław Michalak, Fraunhofer IISB

P20

Simulation of defect formation in DSA process

 

B. Meliorisz, Synopsys GmbH

 

 

 

P22

Process Parameter Induced Roughness for High χ BCPs

 

Mary Ann Hockey, Brewer

P23

Templated DSA vias in sub-7 nm circuits: Design strategy and DSA-aware via decomposition

 

Ioannis Karageorgos, imec

P24

Brush and BCPmaterial development for  DSA hole shrink process

 

Hitoshi Yamano, TOK

P25

Advanced process control of new block copolymer systems to achieve high volume manufacturing specifications

 

S. Martinez, Pollen

P26

GISAXS study of contact hole shrink process based on

graphoepitaxy of cylindrical morphology PS-b-PMMA block copolymers

 

G. Freychet, Leti

P27

Substrate Compatible Neutral-layers for Successful DSA Applications

 

Victor Monreal, EMD

P28

DSA Materials In-film Defectivity Advanced Investigation

 

Maxime Argoud, Leti

P29

Etch transfer characteristics of sub−25 nm half pitch graphoepitaxial DSA contact holes

Nick Brakensiek, Brewer Science